View BLC573_4308769.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BLC573
HF / VHF power LDMOS transistor
Rev. 01 -- 11 December 2008 Preliminary data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
Table 1. Production test information f (MHz) CW 225 VDS (V) 50 PL (W) 300 Gp (dB) 26.5 D (%) 70
Mode of operation
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: N Average output power = 300 W N Power gain = 26.5 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (HF and VHF band) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
I Industrial, scientific and medical applications I Broadcast transmitter applications
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Symbol
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLC573 Description plastic flanged cavity package; 2 mounting slots; 2 leads Version SOT895A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 110 +11 42 +150 225 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Rth(j-c)
[1]
Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 300 W
[1]
Typ 0.21
Unit K/W
Rth(j-c) is measured under RF conditions.
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
2 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
6. Characteristics
Table 6. DC characteristics Tj = 25 C unless otherwise specified Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs Ciss Coss gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance input capacitance output capacitance Conditions VDS = 10 V; ID = 375 mA VDS = 50 V; ID = 900 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 18.75 A VGS = VGS(th) + 3.75 V; ID = 12.49 A VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz Min 110 1.25 1.45 44 Typ 1.7 1.95 56 20 0.09 2.3 300 103 Max 2.25 2.45 4.2 420 Unit V V V A A nA S pF pF pF V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.75 mA
Table 7. RF characteristics Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 900 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter Gp RLin D power gain input return loss drain efficiency Conditions PL = 300 W PL = 300 W PL = 300 W Min 25 10 67 Typ 26.5 13 70 Max 28 Unit dB dB %
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
3 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
800 Coss (pF) 600
001aaj155
400
200
0 0 10 20 30 40 50 VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; capacitance value without internal matching
6.1 Ruggedness in class-AB operation
The BLC573 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 900 mA; PL = 300 W; f = 225 MHz.
7. Application information
7.1 Impedance information
Table 8. Typical impedance Measured ZS and ZL test circuit impedances. f MHz 225 ZS 0.7 + j2.0 ZL 1.95 + j2.0
drain ZL gate ZS
001aaf059
Fig 2.
Definition of transistor impedance
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
4 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
7.2 Reliability
105 Years 104
(1) (2) (3) (4) (5) (6)
001aaj156
103
102
10
(7) (8) (9) (10) (11)
1 0 4 8 12 16 Idc (A) 20
TTF (0.1 % failure fraction). (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C
Fig 3.
BLC573 electromigration (ID, total device)
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
5 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aaj157 001aaj158
30 Gp (dB) 28
80 D (%) 60
30 Gp (dB) 28
(7) (6) (5)
D
26
Gp
40
26
(1) (2) (3) (4)
24
20
24
22 0 100 200 300 PL (W)
0 400
22 0 100 200 300 PL (W) 400
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
VDS = 50 V; f = 225 MHz. (1) IDq = 500 mA (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA
Fig 4.
Power gain and drain efficiency as functions of load power; typical values
Fig 5.
Power gain as function of load power; typical values
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
6 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
60 PL (dBm) 58 ideal PL
001aaj159
(2)
56
(1)
PL 54
52
50 24 26 28 30 32 34 Pi (dBm)
VDS = 50 V; IDq = 900 mA; f = 225 MHz. (1) PL(1dB) = 55.2 dBm (331 W) (2) PL(3dB) = 55.8 dBm (380 W)
Fig 6.
Load power as function of input power; typical values
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
7 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
8.1.2 2-Tone CW
001aaj160 001aaj161
30 Gp (dB) 28
80 D (%) 60
0 IMD3 (dBc) -20
D
26
Gp
40
-40
24
20
-60
(1) (2) (3) (4) (5) (6) (7) (8)
22 0 100 200 300
0 400 500 PL(PEP) (W)
-80 0 100 200 300 400 500 PL(PEP) (W)
VDS = 50 V; IDq = 900 mA; f1 = 224.95 MHz; f2 = 225.05 MHz.
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 500 mA (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA (8) IDq = 1800 mA
Fig 7.
Power gain and drain efficiency as functions of peak envelope load power; typical values
Fig 8.
Third order intermodulation distortion as a function of peak envelope load power; typical values
8.2 Test circuit
Table 9. List of components For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 mm. Component B1 C1 C2 C3, C4 C5, C6, C7 C8 C9, C10, C20 C11 C12 Description ferrite SMD bead Value 100 ; 100 MHz
[1] [1] [1] [1]
Remarks Ferroxcube BDS3/3/8.9-4S2 or equivalent
multilayer ceramic chip capacitor 100 pF multilayer ceramic chip capacitor 39 pF multilayer ceramic chip capacitor 180 pF multilayer ceramic chip capacitor 220 pF multilayer ceramic chip capacitor 4.7 F multilayer ceramic chip capacitor 1 nF multilayer ceramic chip capacitor 30 pF electrolytic capacitor 220 F; 63 V
TDK C4532X7R1E475MT020U or equivalent
[1] [1]
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
8 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
Table 9. List of components ...continued For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 mm. Component C13, C14, C15, C16 C17 C18 C19 L1 Description Value
[2]
Remarks
multilayer ceramic chip capacitor 47 pF multilayer ceramic chip capacitor 33 pF multilayer ceramic chip capacitor 36 pF multilayer ceramic chip capacitor 16 pF 2 turns enamelled copper wire D = 3 mm; d = 1 mm; length = 2 mm; leads = 2 x 6 mm D = 2 mm; d = 1 mm; length = 13 mm; leads = 2 x 5 mm 100 ; 0.6 W
[1] [1] [1]
L2
4 turns enamelled copper wire
R1
[1] [2]
metal film resistor
American Technical Ceramics type 100B or capacitor of same quality. American Technical Ceramics type 180R or capacitor of same quality.
VDD VGG
C8 C9 B1 C10 C13 R1 L1 C15 C12
input 50
C3 C1
C6
L2
C20 50
output
C2 C4 C5 C7 C11 C14 C16 C18
C19
C17
001aaj162
Fig 9.
Class-AB common-source production test circuit
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
9 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
B1
C12 C8 C9 C10
C3 C1 C2 C4
C6
C13 C15 R1 L1 L2 C14 C11 C16 C17 C18 C19 C20
C5
C7
12.2 mm Use isolated washer
16 mm 28 mm 76 mm
29 mm
001aaj163
Fig 10. Component layout for class-AB production test circuit
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
10 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
9. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads SOT895A
D F A
D1
U1 q
B C c
1 L w1
M
A
M
B
M
H
U2 3
p
E1
E
A
2
b
w2
M
C
M
Q
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.1 3.3 b 12.83 12.57 c 0.17 0.14 D 19.9 19.7 D1 20.42 20.12 E 9.53 9.27 E1 9.78 9.53 F 1.14 0.89 H 19.94 18.92 L 5.3 4.5 p 3.38 3.12 Q 1.75 1.50 q 27.94 U1 34.16 33.91 U2 9.98 9.65 w1 0.25 0.01 w2 0.6 0.023
1.345 0.392 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069 1.100 1.335 0.380 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION
OUTLINE VERSION SOT895A
ISSUE DATE 06-02-21 06-04-03
Fig 11. Package outline SOT895A
BLC573_1 (c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
11 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
10. Handling information
10.1 Moisture sensitivity
Table 10. Moisture sensitivity level Class 3 Test methodology IPC/JEDEC J-STD-020-D
11. Abbreviations
Table 11. Acronym CW EDGE GSM HF LDMOS RF SMD TTF VHF VSWR Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Surface Mount Device Time To Failure Very High Frequency Voltage Standing-Wave Ratio
12. Revision history
Table 12. BLC573_1 Revision history Release date 20081211 Data sheet status Preliminary data sheet Change notice Supersedes Document ID
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
12 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLC573_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 11 December 2008
13 of 14
NXP Semiconductors
BLC573
HF / VHF power LDMOS transistor
15. Contents
1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 8.1.1 8.1.2 8.2 9 10 10.1 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Handling information. . . . . . . . . . . . . . . . . . . . 12 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2008 Document identifier: BLC573_1

▲Up To Search▲

Price & Availability of BLC573

	To Download BLC573 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .